Avalanche Technology, headquartered in Fremont, California, is the world leader in Spin Transfer Torque Magnetic RAM (STT-MRAM) non-volatile memory leveraging perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured on 300mm standard CMOS process. Avalanche Technology 總部位于加利福尼亞州弗里蒙特，是自旋轉(zhuǎn)移扭矩磁性 RAM （STT-MRAM） 非易失性存儲(chǔ)器的全球領(lǐng)導(dǎo)者，該存儲(chǔ)器采用垂直磁隧道結(jié) （pMTJ） 單元結(jié)構(gòu)，采用 300mm 標(biāo)準(zhǔn) CMOS 工藝制造。 Backed by more than 300+ granted patents around cell, circuit, and system design leveraging MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed our customers’ objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM. 我們的技術(shù)和產(chǎn)品以 300+ 多項(xiàng)圍繞利用 MRAM 的電池、電路和系統(tǒng)設(shè)計(jì)的授權(quán)專利為后盾，提供突破性的速度、無限的耐用性和非易失性，同時(shí)降低功耗和成本。憑借這些特性，我們的技術(shù)將服務(wù)于并超越客戶的目標(biāo)，除了分立 SRAM、非易失性 SRAM、NOR 和 DRAM 之外，還可以替代嵌入式應(yīng)用中的 SRAM、eFlash 和 ROM。